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Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET |
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| Authors: | A. Fontserè ,A. Pé rez-Tomá sM. Placidi,P. Ferná ndez-Martí nezN. Baron,S. ChenotY. Cordier,J.C. MorenoP.M. Gammon,M.R. Jennings |
| Affiliation: | a IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain b CRHEA-CNRS, rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France c PICOGIGA International, Place Marcel Rebuffat, Z.A. de Courtaboeuf 7, 91140 Villejust, France d School of Engineering, University of Warwick, Coventry CV4 7AL, England, UK |
| Abstract: | In this paper two types of Al/Ti-based Ohmic contacts to Gallium Nitride (GaN) based devices are presented; ImplantedN+GaN (like the ones found in the Source/Drain of GaN Metal Oxide Semiconductor Field Effect Transistors-MOSFET) and heterojunction (HJ) AlGaN/GaN contacts (Source/Drain of High Electron Mobility Transistors-HEMT). Sheet resistance (Rsh) and contact resistance (Rc) have been investigated in the temperature (T) range of 25-250 °C. It was found that the Rsh (850/700 Ω□) (25/250 °C) and Rc (2.2/0.7 Ωmm) decrease with T for ImplantedN+GaN contact and Rsh (400/850 Ω□) and Rc (0.2/0.4 Ωmm) (weakly for Rc) increase with T for HJAlGaN/GaN contact. Numerical computation based models are used to determine the theoretical Rsh and Rc behavior with T and to fit the experimental values. |
| Keywords: | GaN MOSFET HEMT Ohmic contact TLM Temperature Modeling |
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