The influence of dopant species on thermal stability of NiSi film |
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Authors: | Hiroshi Kimura Ryuji Tomita |
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Institution: | a Test and Analysis Engineering Division, NEC Electronics Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan b Process Technology Division, NEC Electronics Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan |
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Abstract: | We investigated the relationship between thermal stability of NiSi films and the implanted dopant species on Si substrates. The most stable NiSi layer appeared on Boron-implanted Si substrate, where the formation of pseudo-epitaxial transrotational structure was observed, just in case that the dose of boron is more than 5e15 atoms/cm2. This unique crystallographic orientation of NiSi film on Boron-implanted substrate is a key role of thermal stability because thermal stress at grain boundary can be diminished by peculiar arrangement of transrotational domains, owing to the anisotropy in coefficient of thermal expansion (CTE) of NiSi. |
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Keywords: | NiSi Transrotational structure TED Thermal stability XRD |
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