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Graphene: Materials to devices (invited) |
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| Authors: | J. ChaeJ. Ha H. BaekY. Kuk S.Y. JungY.J. Song N.B. ZhitenevJ.A. Stroscio S.J. WooY.-W. Son |
| Affiliation: | a Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea b Center for Nanoscale Science and Technology, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20988, USA c School of Computational Sciences, Korea Institute of Advanced Studies, Dongdaemoon-gu, Seoul 130-722, Republic of Korea |
| Abstract: | Despite recent progress in understanding geometric structure, electronic structure, and transport properties in a graphene device (GD), role of point defects, edges, traps in a GD or a gate insulator has been poorly defined. We have studied electronic and geometric structures of these defects using scanning probe microscopy and try to link those with the transport properties of the GD. We perform scanning gate microscopy study to understand the local carrier scattering. It was found that geometric corrugations, defects and edges directly influence the local transport current. This observation is linked directly with a proposed scattering model based on macroscopic transport measurements. We suggest that dangling bonds in insulator-material SiO2 mainly used in GDs produce charge puddles and they work as scattering centers. |
| Keywords: | Graphene device Gate insulator Carrier scattering Scanning probe microscopy |
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