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Temperature dependences of Raman scattering in different types of GaN epilayers |
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| Authors: | Xue Xiao-Yong Xu Sheng-Rui Zhang Jin-Cheng Lin Zhi-Yu Ma Jun-Cai Liu Zi-Yang Xue Jun-Shuai and Hao Yue |
| Institution: | Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xián 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xián 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xián 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xián 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xián 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xián 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xián 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xián 710071, China |
| Abstract: | First-order Raman scatterings of hexagonal GaN layers deposited by the hydride vapour phase epitaxy and by metal-organic chemical vapour deposition on SiC and sapphire substrates are studied in a temperature range between 303 K and 503 K. The temperature dependences of two GaN Raman modes (A1 (LO) and E2 (high)) are obtained. We focus our attention on the temperature dependence of E2 (high) mode and find that for different types of GaN epilayers their temperature dependences are somewhat different. We compare their differences and give them an explanation. The simplified formulas we obtained are in good accordance with experiment data. The results can be used to determine the temperature of a GaN sample. |
| Keywords: | GaN Raman scattering temperature dependence |
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