A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes |
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| Authors: | Zhou Jian-Lin Yu Jun-Sheng Yu Xin-Ge and Cai Xin-Yang |
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| Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;Department of Electronic Engineering, College of Communication and;State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | C60 field-effect transistor (OFET) with a mobility as high as 5.17 cm2/V·s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-(methyl methacrylate) (PMMA) insulator and a bathophenanthroline (Bphen)/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C60 film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C60 film efficiently. |
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| Keywords: | organic field-effect transistors C60 Bphen passivation layer |
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