非晶硅碳薄膜发光二极管发光的热致猝灭

本文详细测试了用RF-PECVD法制备的非晶硅碳薄膜发光二极管的光强电流特性和温度对器件发光强度的影响.在直流电流驱动下,器件的发光在注入电流1A/cm2左右趋于饱和,而在低占空比的脉冲电流驱动下器件的发光直至注入电流20A/cm2仍随电流近似线性增长,但提高环境温度发光随之下降.结合对器件受热情况分析表明,热致猝灭而非场致猝灭导致了器件在大电流下的发光饱和,并简要提出了改进器件散热的措施.

TEMPERATURE-QUENCHING OF LUMINESCENCE OF a-SiC THIN FILM LIGHT-EMITTING DIODES

Luminescence-current characteristics and temperature influence on luminescence of a-SiC thin .film light-emitting diodes fabricated by RF-PECVD methed have been measured clearly. Under direct current conditions, the luminescence of the devices goes to saturation at about 1A/ cm2 current density; and under pulsed current with low duty ratio, it grows with current density near-linearly up to 20A/cm2, and with increasing of circumstance temperture, the luminescence decreases rapidly. After analyszing the devices in heated state, it is shown that temperature-quenching, instead of field-quenching,leads to luminescence saturaiton of the devices at high current, and at last some methods of improving heat dissipation of the device are proposed briefly.