| 电化学方法去除Si片CMP后表面金属杂质的研究 |
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| 引用本文： | 边娜,檀柏梅,刘玉岭,牛新环,刘金玉.电化学方法去除Si片CMP后表面金属杂质的研究[J].半导体技术,2010,35(9):881-884. |
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| 作者姓名： | 边娜 檀柏梅 刘玉岭 牛新环 刘金玉 |
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| 作者单位： | 河北工业大学,微电子研究所,天津,300130;河北工业大学,微电子研究所,天津,300130;河北工业大学,微电子研究所,天津,300130;河北工业大学,微电子研究所,天津,300130;河北工业大学,微电子研究所,天津,300130 |
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| 基金项目： | 国家自然科学基金，国家重大专项项目 |
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| 摘 要： | 论述了集成电路制备中Si衬底CMP过程中引入的金属杂质的危害,分析了目前CMP后清洗中金属杂质去除方法的现状和存在问题,通过对金属杂质在Si片表面的吸附进行理论分析,提出了用金刚石膜电化学清洗方法去除.该方法通过阴极对金属离子的吸附并放电还原,达到了去除微量金属杂质的目的,同时使难以去除的重金属杂质也得到了有效去除,减少了环境污染.
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| 关 键 词： | 集成电路 化学机械抛光 金属杂质 电化学 清洗 |
Study of Electrochemical Cleaning Method for Metallic Contaminations on Silicon Wafer Surface After CMP |
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| Bian Na,Tan Baimei,Liu Yuling,Niu Xinhuan,Liu Jinyu.Study of Electrochemical Cleaning Method for Metallic Contaminations on Silicon Wafer Surface After CMP[J].Semiconductor Technology,2010,35(9):881-884. |
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| Authors: | Bian Na Tan Baimei Liu Yuling Niu Xinhuan Liu Jinyu |
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| Institution: | Bian Na,Tan Baimei,Liu Yuling,Niu Xinhuan,Liu Jinyu(Institute of Microelectronics,Heibei Unirersity of Technology,Tianjin 300130,China) |
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| Abstract: | The harm of metallic contaminations resulted from silicon substrate CMP process in the IC preparation was explained,and the current situation and existent problems of removing metallic contaminations in cleaning method after CMP were analyzed.Through theoretical analysis of metal contaminations deposited on the surface of silicon,then the electrochemical cleaning of diamond film was proposed to remove metallic contaminations.In this method,the metal ions are adsorbed and then discharge reduction on the cath... |
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| Keywords: | IC CMP metallic contamination electrochemical cleaning |
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