Band structure and scattering mechanisms in manganese monosilicide

The electrical and thermal conductivities, the thermal emf, and the Hall coefficient have been measured in manganese monosilicide at temperatures between 70 and 700 °K. Band parameters are calculated for MnSi on the basis of wide-band and narrow-band models. Scattering mechanisms for the current carriers and phonons are discussed; in particular, the anomalous temperature dependence of the thermal conductivity is attributed to the high efficiency for phonon scattering by conduction electrons.Translated from Izvestiya VUZ. Fizika, No. 12, pp. 108–112, December, 1969.