| Enhanced Spin Injection into ZnO Semiconductor Measured by Magnetoresistance |
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| 引用本文： | 季刚 颜世申 陈延学 刘国磊 曹强 梅良模. Enhanced Spin Injection into ZnO Semiconductor Measured by Magnetoresistance[J]. 中国物理快报, 2006, 23(2): 446-449 |
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| 作者姓名： | 季刚 颜世申 陈延学 刘国磊 曹强 梅良模 |
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| 作者单位： | School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 |
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| 基金项目： | Supported by the National Key Basic Research and Development Programme of China under Grant No 2001CB610603, the National Natural Science Foundation of China under Grant Nos 10234010 and 50402019, and the New Century Fund for 0utstanding Scholars. |
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| 摘 要： | We prepare 2× （NiFe/CoZnO）/ZnO/（CoZnO/Co）×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2× （NiFe/CoZnO） and the fixed magnetic layer （CoZnO/Co） × 2 are used to realize the spin valve functions in the external switch magnetic field. Since the wide gap semiconductor ZnO layer is located between the two magnetic semiconductor layers CoZnO, the electrical ,spin injection from the magnetic semiconductor CoZnO into the non-magnetic semiconductor ZnO is realized. Based on the measured magnetoresistance and the Schmidt model, the spin polarization ratio in the ZnO semiconductor is deduced to be 11.7% at 90K and 7.0% at room temperature, respectively.
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| 关 键 词： | 增强自旋注入 ZnO半导体 磁阻抗 半导体物理 |
| 收稿时间： | 2005-08-22 |
| 修稿时间： | 2005-08-22 |
Enhanced Spin Injection into ZnO Semiconductor Measured by Magnetoresistance |
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| JI Gang, YAN Shi-Shen, CHEN Yan-Xue, LIU Guo-Lei, CAO Qiang, MEI Liang-Mo. Enhanced Spin Injection into ZnO Semiconductor Measured by Magnetoresistance[J]. Chinese Physics Letters, 2006, 23(2): 446-449 |
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| Authors: | JI Gang YAN Shi-Shen CHEN Yan-Xue LIU Guo-Lei CAO Qiang MEI Liang-Mo |
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