Intrinsic stress of ultrathin epitaxial films |
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| Authors: | R Koch |
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| Institution: | Paul-Drude-Institut für Festk?rperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin, Germany, DE
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| Abstract: | The present article focuses on the stress developing during the deposition of ultrathin epitaxial films in the thickness range
of a few atomic layers. The studied systems exhibit the three well-known modes of film growth: Stranski–Krastanow mode Ge/Si(001),
Ge/Si(111), Ag/Si(111)], Frank–Van der Merwe mode Fe/MgO(001)] and Volmer–Weber mode Ag/mica(001), Cu/mica(001)]. The experimental
results demonstrate the important role of the misfit strain as well as the contribution of surface stress effects as mechanisms
for the stress in single atomic layers.
Received: 26 April 1999 / Accepted: 25 June 1999 / Published online: 6 October 1999 |
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| Keywords: | PACS: 68 55 Jk 68 60 Bs 81 15 Hi |
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