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Photoluminescence excitation spectroscopy of GaP1−xNx alloys: conduction-band-edge formation by nitrogen incorporation |
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| Authors: | Hiroyuki Yaguchi Seiro Miyoshi Goshi Biwa Masaya Kibune Kentaro Onabe Yasuhiro Shiraki Ryoichi Ito |
| Affiliation: | a Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan b Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan |
| Abstract: | We have investigated the conduction-band-edge formation in GaP1−xNx alloys by nitrogen incorporation into GaP using photoluminescence excitation (PLE) spectroscopy. The PLE spectra of GaP1−xNx alloys with various nitrogen concentrations show that the absorption edge shifts to lower energies with increasing nitrogen concentration. From the nitrogen concentration dependence of the absorption edge energy we found that the conduction-band-edge formation in GaP1−xNx alloys originates from the formation of the A line. |
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