超高速大电流半导体开关实验研究

 利用自行研制的固态半导体开关RSD，采用电容储能方式，研究了RSD的电压响应时间、大电流特性、电流上升率等。在测试RSD的电压响应时间时，得到了25 ns的电压下降曲线。在主电容电压为8 kV时，得到峰值为10.1 kA、脉宽为34 μs、电流上升率为2.03 kA/μs的大电流脉冲。通过调整主电路，在主电容为3 kV时，得到的电流脉冲峰值为8.5 kA、脉宽为2.5 μs、电流上升率为7.2 kA/μs。结果表明，RSD是一种开通快、通流能力强、电流上升率高的大功率半导体开关器件。

Experimental investigation of ultrafast and high current semiconductor switch

Some interesting characteristics of the solid-state semiconductor switch, the reverse switching dynistor(RSD), such as the time of voltage fall, current carrying capability and current rise rate, were investigated under the condition of being the closing switch of capacitive energy storage. A 25 ns voltage-falling time was achieved. When the voltage of main capacitor was 8 kV, the peak value of current pulse was 10.1 kA, pulse width and current rise rate were 34 μs and 2.03 kA/μs respectively. After adjusting parameters of the main discharge circuit, a current pulse was obtained at peak current of 8.5 kA with current rise rate of 7.2 kA/μs only when the main capacitor voltage was 3 kV. Experimental results show that RSD is a new type of high power semiconductor switch with fast turn-on,