消除载流子分布的不均匀性的影响准确测量深中心俘获载流子的截面

Zylbersztejn指出在空间电荷区边界层中,由于势垒的存在而引起的载流子分布的不均匀性,对测量深中心对载流子的俘获截面的不良影响,并且提出一种消除这种影响的方法。可惜的是,他的方法只适用于在能级相当深的情况下,测量低温时载流子的俘获截面。本文在详细分析结电容瞬态动力过程的基础上,提出一种消除载流子分布不均匀(包括边界层中载流子分布不均匀和体内浅施主或浅受主浓度不均匀)的影响,准确测量俘获截面的方法,不受测量温度及样品中的能级情况的严重限制。这对于研究俘获截面与温度的关系以及进而研究俘获动力学机制是很关键词：

A METHOD FOR MEASURING CARRIER CAPTURE CROSS SECTIONS OF DEEP CENTERS WITH ELIMINATING THE INFLUENCE OF INHOMOGENEOUS CARRIER DISTRIBUTION

Zylbersztejn had pointed out that the in homogeneous distribution of carriers in the edge region of the space charge region exerts a disadvantageous influence on the measurement of carrier capture cross sections of deep centers and suggested a method to eliminate this effect. However, his method can only be used to measure carrier capture cross sections at low temperature for quite deep levels. We suggest a new method to remove the harmful impact of inhomogeneous distribution of carriers (including both the inhomogeneous distribution of the carriers in. the edge region and that due to nonuniform shallow donors and acceptors) on the basis of an analysis of the dynamic process of capacitance transient. This method is not subjeer to the serious restriction of the temperature range of measurement and the situation of the levels under measuring. This is important for the study of the temperature dependence of carrier capture cross sections and the tudy of the carrier capture dynamices. As an example. the method has been used to measure the electron capture cross section of gold acceptor in silicon. The results show that the accuracy of measurement is improved.