| 敏感半导体陶瓷的显微物理模型(Ⅰ) |
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| 引用本文： | 南策文.敏感半导体陶瓷的显微物理模型(Ⅰ)[J].物理学报,1987,36(10):1305-1312. |
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| 作者姓名： | 南策文 |
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| 作者单位： | 武汉工业大学硅酸盐材料科学与工程系 |
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| 摘 要： | 结合改进的有效介质理论(EMT)和敏感半导体陶瓷的特征,提出了一个简单的、定量的物理模型——显微物理模型,用来描述敏感半导体陶瓷的显微结构特性与性质的关系。在本文中,我们把这个显微物理模型应用于描述非线性ZnO陶瓷的电性质,并发现由该模型得到的结果与实验结果和由导电理论(半导体理论和量子理论)得到的结果是一致的。
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| 收稿时间： | 1986-10-27 |
A MICROSTRUCTURE PHYSICAL MODEL OF SENSITIVE SEMICONDUCTOR CERAMICS (Ⅰ) |
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| NAN CE-WEN.A MICROSTRUCTURE PHYSICAL MODEL OF SENSITIVE SEMICONDUCTOR CERAMICS (Ⅰ)[J].Acta Physica Sinica,1987,36(10):1305-1312. |
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| Authors: | NAN CE-WEN |
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| Abstract: | Combining the improved effective-mediume theory (EMT) with the feature of sensitive semiconductor ceramics, we proposed a simple and quantitatively physical model that can be used to describe the relation between micros tructure feature and proprety of sensitive semiconductor ceramics. We used this model to describe the electrical propreties of nonlinear ZnO ceramics by, and found that the results of the model are consistent with experimental results and the results obtained by the quentum theory of semiconductor conduction. |
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