Photoelectric properties of the GeSi/Si heterostructures with self-assembled nanoclusters grown by sublimation molecular beam epitaxy in a GeH4 medium |
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| Authors: | D O Filatov M V Kruglova M A Isakov A P Gorshkov V G Shengurov V Yu Chalkov S A Denisov |
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| Institution: | 1. Lobachevskii Nizhni Novgorod State University, Nizhni Novgorod, Russia
2. Physical Technical Research Institute, Lobachevskii Nizhni Novgorod State University, Nizhni Novgorod, Russia
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| Abstract: | The photosensitivity (PS) spectra of the GeSi/Si(001) heterostructures with self-assembled nanoclusters grown by sublimation
molecular beam epitaxy in a GeH4 medium have been studied by photo-emf spectroscopy at the semiconductor/electrolyte junction (PSE) and by photo-emf and photocurrent
spectroscopy of Schottky barriers including the temperature dependence of the PS spectra in the temperature range of 10–300
K. The bands related to the phonon assisted and phonon-less interband of spatially indirect optical transitions in the GeSi
nanoclusters have been observed in the PS spectra even at 300 K. The scatter effect of the GeSi nanoclusters in size and/or
in composition on the PS spectrum’s edge shape has been theoretically considered. The emission theory of the photoexcited
carriers from the quantum wells of the GeSi/Si nanoclusters built-in to a Schottky barrier (p-tn junction, semiconductor/electrolyte junction) has been developed. |
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