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Atomic layer deposition of Al2O3, ZrO2, Ta2O5, and Nb2O5 based nanolayered dielectrics |
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| Authors: | Kaupo Kukli Mikko RitalaMarkku Leskelä Timo SajavaaraJuhani Keinonen David GilmerSandeep Bagchi Lata Prabhu |
| Institution: | a Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland b Accelerator Laboratory, University of Helsinki, P.O. Box 43, FIN-00014 Helsinki, Finland c Motorola, DigitalDNAtm Labs, 3501 Ed Bluestein Boulevard, Austin, TX 78721, USA |
| Abstract: | Ta2O5, Ta-Nb-O, Zr-Al-Nb-O, and Zr-Al-O mixture films or solid solutions were grown on Si(1 0 0) substrates at 300 °C by atomic layer deposition. The equivalent oxide thickness of Ta2O5 based capacitors was between 1 and 3 nm. In Zr-Al-O films, the high permittivity of ZrO2 was combined with high resistivity of Al2O3 layers. The permittivity, surface roughness and interface charge density increased with the Zr content and the equivalent oxide thickness was between 2.0 and 2.5 nm. In the Zr-Al-Nb-O films the equivalent oxide thickness remained at 1.8-2.0 nm. |
| Keywords: | D150 D180 C185 |
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