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Atomic layer deposition of ZrO2 thin films using a new alkoxide precursor |
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| Authors: | R. Matero,M. RitalaM. Leskelä ,A.C. Jones,P.A. WilliamsJ.F. Bickley,A. SteinerT.J. Leedham,H.O. Davies |
| Affiliation: | a Department of Chemistry, University of Helsinki, P.O. Box 55, A.I. Virtasen aukio 1, FIN-00014 Helsinki, Finland b Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, UK c Inorgtech Limited, 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, UK |
| Abstract: | Zirconium oxide thin films were grown by atomic layer deposition using a new type of Zr alkoxide: [Zr(OtBu)2(dmae)2]2 (dmae is dimethylaminoethoxide). Water was used as the oxygen source. The films grown at 190-240 °C were amorphous, and the films grown at 290-340 °C were nanocrystalline. The highest refractive index of the films was 2.08 at a wavelength of 580 nm. The permittivity of a film grown at 240 °C was 25. |
| Keywords: | C185 Z100 |
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