| C_(60)晶体生长初探 |
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| 引用本文： | 朱虹,陈霞.C_(60)晶体生长初探[J].河南师范大学学报(自然科学版),1999,27(2):28-30. |
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| 作者姓名： | 朱虹 陈霞 |
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| 作者单位： | 河南师范大学物理系 |
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| 基金项目： | 河南省科委资助项目!( 964 0 5 2 30 0 ) |
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| 摘 要： | :C60单晶的制备是一个动力学过程,与许许多多的因素有关,很小的微扰就可能直接影响到单晶的成核与长大的形状.本文试图用单晶生长理论,对单晶制备中出现的“各种角度的孪晶”,“较大的枝蔓晶”和“台阶生长的空心晶体”等进行分析,以便能找出生长单晶的最佳工艺条件和理论依据.
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| 关 键 词： | C~(60)生长 过饱和蒸气化 吉布斯自由能 |
The Earlier Probing of the Growth of C_(60) Crystal |
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| ZHU Hong,CHEN Xia.The Earlier Probing of the Growth of C_(60) Crystal[J].Journal of Henan Normal University(Natural Science),1999,27(2):28-30. |
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| Authors: | ZHU Hong CHEN Xia |
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| Abstract: | The proparation of C 60 singal-crystal is a processing of dynamics .It has something to do with the matter, for example, the little confusion may affect directly the growth and shape the singal crystal core, We try to analyse the appearaces of “all of the twin-crystal”, “bigger branch-dendril crystal ”and the non-core crystal of the step-growth in the proparation of the sigal-crystal. So that we can find out the theoretical basis of the best techrotogical design of the growing singal-crystal. |
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| Keywords: | the growth of C 60 ultra-saturation vaper pressure Gibbs free energy |
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