| 碲化镉纳米线的制备和生长机理分析 |
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| 引用本文： | 姜海涛,郑毓峰,简基康,孙言飞,陈艳华.碲化镉纳米线的制备和生长机理分析[J].新疆大学学报(理工版),2005,22(4):425-429. |
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| 作者姓名： | 姜海涛 郑毓峰 简基康 孙言飞 陈艳华 |
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| 作者单位： | [1]新疆大学物理系材料实验室,乌鲁木齐830046 [2]北京航天航空大学理学院凝聚态物理中心,北京100083 |
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| 基金项目： | 国家自然科学基金资助项目（50062002） |
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| 摘 要： | 利用物理气相沉积方法,在Si衬底上制备了CdTe纳米线和纳米晶.X射线衍射（XRD）和扫描电子显微镜（SEM）研究表明所得产物为四方结构CdTe.CdTe纳米线的直径约20nm,长度约为几个微米,纳米晶粒径约为100 nm.分析了载流气体流速、温度等因素对过饱和度的影响,进而影响低维纳米材料的形貌结构.
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| 关 键 词： | 物理气相沉积（PVD） CdTe 纳米线 纳米晶 生长机理 |
| 文章编号： | 1000-2839（2005）04-0425-05 |
| 收稿时间： | 2005-05-23 |
| 修稿时间： | 2005年5月23日 |
Growth of CdTe Nanowires and Analyse of Growth Mechanism |
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| JIANG Hai-tao, ZHENG Yu-feng, JIAN Ji-kang, SUN Yang-fei, CHEN Yan-hua.Growth of CdTe Nanowires and Analyse of Growth Mechanism[J].Journal of Xinjiang University(Science & Engineering),2005,22(4):425-429. |
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| Authors: | JIANG Hai-tao ZHENG Yu-feng JIAN Ji-kang SUN Yang-fei CHEN Yan-hua |
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| Abstract: | CdTe nanowires and nanocrystals were grown on the silicon substrates via physical vapor deposition. X-ray diffraction and scanning electron microscopy images show that the final products were tetragonal CdTe nanowires,which were about 20nm in diameter and up to several micrometers in length. The CdTe nanocrystals were about 100nm. We investigate the influence of substrate temperature and the flow rate of Ar on the degree of the super saturation,which affect the prevailing growth morphology of the low-dimension nanomaterial. |
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| Keywords: | PVD i CdTe nanowires nanocrystals growth mechanism |
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