| 用红外激光脉冲触发半绝缘GaAs光电导开关的实验研究 |
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| 引用本文： | 吴卫东,许华,魏胜,唐永建,陈正豪. 用红外激光脉冲触发半绝缘GaAs光电导开关的实验研究[J]. 强激光与粒子束, 2002, 14(6): 0-876 |
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| 作者姓名： | 吴卫东 许华 魏胜 唐永建 陈正豪 |
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| 作者单位： | 1.西安理工大学 应用物理系, 陕西 西安 71 0048; |
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| 基金项目： | 国家863惯性约束聚变领域资助课题 |
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| 摘 要： | 报道了用光子能量低于GaAs禁带宽度的红外激光脉冲，触发电极间隙为3mm和8mm的半绝缘GaAs光电导开关的实验结果。使用单脉冲能量为1.9mJ的1 064nm Nd:YAG激光触发开关， 在偏置电压分别为3kV和5kV条件下，光电导开关分别工作于线性和非线性模式。用900nm半导体激光器和1 530nm掺铒光纤激光器分别进行触发实验，得到了重复频率分别为5kHz和20MHz的电脉冲波形。结果表明，半绝缘GaAs光电导开关可以吸收大于本征吸收限波长红外激光脉冲。
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| 关 键 词： | 光电导开关 半绝缘GaAs EL2能级 非本征吸收 |
| 文章编号： | 1001-4322(2002)06-0873-04 |
| 收稿时间： | 2002-02-22 |
| 修稿时间： | 2002-02-22 |
Pulse laser vapor deposition technology and its application in fabrication of the ICF film-targets |
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| wu wei dong,xu hua,wei sheng,tang yong jian,chen zheng hao. Pulse laser vapor deposition technology and its application in fabrication of the ICF film-targets[J]. High Power Laser and Particle Beams, 2002, 14(6): 0-876 |
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| Authors: | wu wei dong xu hua wei sheng tang yong jian chen zheng hao |
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| Affiliation: | 1.Department of Applied Physics,Xi'an University of Technology,Xi'an 710048,China;2.State Key Laboratory of Transient Optics and Technology,Xi'an 710068,China |
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| Abstract: | The multi films targets are often used in the studies of ICF experiment and astrophysical opacity. One of the methods producing these targets is the Pulse Laser Deposition (PLD) technology. In this paper, the principle of PLD technology, experiment method, PLD equipment design and the application in fabrication of the ICF film targets have been described in detail. Using PLD method, the Cu films and Cu/Fe films were been produced. The average roughness of Cu films is 0.2nm and Cu/Fe films is 0.4nm. Experiments shown that the equipment and the methods were suitable. |
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| Keywords: | ICF |
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