Simulation of Surfactant Effects on Growth of Semiconductor Hetero-Epitaxial Sb-Ge/Si(111) |
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Authors: | WU Li-Li and WU Feng-Min |
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Affiliation: | Institute of Condensed Matter Physics, Zhejiang Normal University, Jinhua 321004, China |
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Abstract: | A kinetic Monte Carlo simulation is performed in order to study the effect of Sb as a surfactant on the growth of Ge/Si(111). In our model the exchange mechanism between Ge and Sb atoms and the re-exchange mechanism in which the exchanged Ge adatom re-exchange with the lifted Sb atom to return to the surfactant layer, are considered. Our simulation shows the re-exchange process plays an important role on the growth mode transition in Ge/Sb/Si(111) system. The influences of the substrate temperature and the deposition rate on the growth of Ge/Sb/Si(111) system is discussed. |
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Keywords: | growth mode surfactant re-exchange Monte Carlo simulation |
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