Study of Defect-Layers Effect in Ferroelectric Thin Film with TransverseIsing Model |
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| Authors: | WANG Chun-Dong TENG Bao-Hua Kwok So-Ying LU Zhen-Zhen YUEN Muk-Fung |
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| Institution: | 1.Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China;2.School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | By taking into account the two-spin interaction in the transverse Ising model (TIM), the influence of the defect layers (including JB andΩB on the polarization and Curie temperature are calculated numerically, within the framework of the decoupling approximation under Green's function. The numerical results show that the polarization and Curie temperature will both become large sensitively due to the large values ofJB and the small value of ΩB of the defect layers. Meanwhile, the dependence of the crossover values of the exchange interaction JA, the transverse field ΩAof the bulk material on the exchange
interaction JB and the transverse fieldΩB of the defect layers are shown in 3-Dimensional (3-D) figures for the first time. Moreover, the transition features of the ferroelectric thin film with defect layers are presented. |
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| Keywords: | ferroelectrics phase transitions defect-layer |
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