Direct measurement of valence-charge asymmetry by x-ray standing waves |
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Authors: | Woicik J C Nelson E J Pianetta P |
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Affiliation: | National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA. |
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Abstract: | By monitoring valence-photoelectron emission under condition of strong x-ray Bragg reflection, we have determined that a majority of GaAs valence charge resides on the anion sites of this heteropolar crystal, in quantitative agreement with the GaAs bond polarity as calculated from the Hartree-Fock term values. In contrast, the valence-charge distribution in Ge is found to be symmetric. In both cases, the valence emission is found to be closely coupled to the atomic cores. |
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