Focused ion beam gallium implantation into silicon |
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Authors: | M. Tamura S. Shukuri M. Moniwa M. Default |
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Affiliation: | (1) Department of Physics, University of Lecce, I-73100 Lecce, Italy;(2) Department of Physics, University of Modena, I-41100 Modena, Italy |
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Abstract: | Samples formed of a thin metal film deposited on silicon single crystal were annealed with electron and laser (ruby and excimer) pulses over a wide range of fluences. From a comparison of the experimental results with the temperature profiles of the irradiated samples, it turns out that suicide formation starts when the metal/silicon interface reaches the lowest eutectic temperature of the binary metal/silicon system. The growth rate of reacted layers is of the order of 1 m/s. |
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Keywords: | 68.55 79.20H 79.20D |
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