| Ar+, He+，S+离子轰击n-InP单晶表面的机理研究 |
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| 引用本文： | 胡靖宇,Waqas Mahmoo,赵清. Ar+, He+，S+离子轰击n-InP单晶表面的机理研究[J]. 化学物理学报, 2014, 27(1): 82-86 |
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| 作者姓名： | 胡靖宇 Waqas Mahmoo 赵清 |
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| 作者单位： | 北京理工大学物理学院，北京100081;北京理工大学物理学院，北京100081;北京理工大学物理学院，北京100081 |
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| 摘 要： | 通过X射线光电子能谱和低能电子衍射实验研究了10～180 eV的Ar+、 He+、S+离子轰击n-InP(100)表面， 发现S+离子轰击可以产生In-S组分，减轻离子轰击对表面的物理损伤.对于Ar+离子轰击后的表面，经过S+离子处理和加热过程以后，表面损伤得到了修复，最终得到了2×2的InP表面，进一步验证了S+离子对InP表面的修复作用.
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| 关 键 词： | 低能离子轰击，加热，表面损伤，费米能级 |
| 收稿时间： | 2013-04-14 |
Effect of Ar+, He+, and S+ Irradiation on n-InP Single Crystal |
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| Jing-yu Hu,Waqas Mahmood and Qing Zhao. Effect of Ar+, He+, and S+ Irradiation on n-InP Single Crystal[J]. Chinese Journal of Chemical Physics, 2014, 27(1): 82-86 |
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| Authors: | Jing-yu Hu Waqas Mahmood Qing Zhao |
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| Affiliation: | School of Physics, Beijing Institute of Technology, Beijing 100081, China;School of Physics, Beijing Institute of Technology, Beijing 100081, China;School of Physics, Beijing Institute of Technology, Beijing 100081, China |
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| Abstract: | The irradiation effects of Ar+, He+, and S+ with energy from 10 eV to 180 eV on n-InP(100) surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-InP surface, damage on the surface, displacement of the Fermilevel and formation of sulfur species on S+ exposed surface are found and studied. Successive annealing is done to suppress the surface states introduced by S+ exposure. However, it is unsuccessful in removing the damage caused by noble ions. Besides, S+ ions can efficiently repair the Ar+ damaged surface, and finally form a fine 2×2 InP surface. |
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| Keywords: | Low energy ion bombardment Annealing Surface damage Fermi level |
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