Imaging nanoscale electronic inhomogeneity in the lightly doped Mott insulator Ca(2-x)NaxCuO2Cl2 |
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Authors: | Kohsaka Y Iwaya K Satow S Hanaguri T Azuma M Takano M Takagi H |
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Institution: | Department of Advanced Materials Science, University of Tokyo, Kashiwa-no-ha, Kashiwa, Chiba 277-8651, Japan. |
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Abstract: | The spatial variation of electronic states was imaged in the lightly doped Mott insulator Ca(2-x)NaxCuO2Cl2 using scanning tunneling microscopy or spectroscopy. We observed nanoscale domains with a high local density of states within an insulating background. The observed domains have a characteristic length scale of 2 nm (approximately 4-5a, a: lattice constant) with preferred orientations along the tetragonal 100] direction. We argue that such spatially inhomogeneous electronic states are inherent to slightly doped Mott insulators and play an important role for the insulator to metal transition. |
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