Mechanism of gap opening in a triple-band Peierls system: in atomic wires on Si |
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Authors: | Ahn J R Byun J H Koh H Rotenberg E Kevan S D Yeom H W |
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Institution: | Center for Atomic Wires and Layers, Yonsei University, Seoul 120-749, Korea. |
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Abstract: | One dimensional (1D) metals are unstable at low temperature undergoing a metal-insulator transition coupled with a periodic lattice distortion, a Peierls transition. Angle-resolved photoemission study for the 1D metallic chains of In on Si(111), featuring a metal-insulator transition and triple metallic bands, clarifies in detail how the multiple band gaps are formed at low temperature. In addition to the gap opening for a half-filled ideal 1D band with a proper Fermi surface nesting, two other quasi-1D metallic bands are found to merge into a single band, opening a unique but k-dependent energy gap through an interband charge transfer. This result introduces a novel gap-opening mechanism for a multiband Peierls system where the interband interaction is important. |
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