| 中波红外焦平面列阵探测器γ辐照效应 |
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| 引用本文： | 廖毅,王建新,张勤耀.中波红外焦平面列阵探测器γ辐照效应[J].量子电子学报,2007,24(1):110-113. |
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| 作者姓名： | 廖毅 王建新 张勤耀 |
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| 作者单位： | 中国科学院上海技术物理研究所,上海,200083;中国科学院上海技术物理研究所,上海,200083;中国科学院上海技术物理研究所,上海,200083 |
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| 摘 要： | 报道了γ射线辐照对薄膜材料碲镉汞(Hg1-xCdxTe)制备的中波红外焦平面列阵探测器性能的影响.γ射线辐照的剂量依次为3×106 rad、9×106rad、2×107 rad.测量了器件在辐照前及各个剂量辐照后的I-V特性、黑体响应、噪声等性能参数.通过分析实验数据,发现器件的暗电流,噪声随辐照剂量的增加而增大,黑体响应随辐照剂量的增大而减小.其中I-V特性受辐照影响最大,黑体响应和噪声对辐照不是很敏感.这些表明随着辐照剂量的增加,器件的性能逐步衰退.
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| 关 键 词： | 光电子学 红外焦平面探测器 辐照效应 γ射线辐照 碲镉汞 |
| 文章编号： | 1007-5461（2007）01-0110-04 |
| 收稿时间： | 2005-12-09 |
| 修稿时间： | 2006-01-23 |
Gamma radiation effects on MWIR HgCdTe FPA device |
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| LIAO Yi,WANG Jian-xin,ZHANG Qin-yao.Gamma radiation effects on MWIR HgCdTe FPA device[J].Chinese Journal of Quantum Electronics,2007,24(1):110-113. |
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| Authors: | LIAO Yi WANG Jian-xin ZHANG Qin-yao |
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| Abstract: | The affects of gamma radiation on the performances of thin film HgCdTe MWIR FPA infrared detector is reparted. The different doses of gamma irradiation is 3 ×106 rad,9×106 rad and 2 × 107 rad. The Ⅰ-Ⅴ characteristics,blackbody responses and noise were measured before and after each dose of irradiation. With the total dose increased,the current and noise of the device increased while blackbody responses decreased. The Ⅰ-Ⅴ characteristics were affected by gamma radiation seriously while blackbody responsively and blackbody responses was affected a little. These shows the performances of the device was degenerated as the dose of gamma irradiation increased. |
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| Keywords: | optoelectronics infrared FPA detector radiation effects gamma irradiation HgCdTe |
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