Synthesis and electrical properties of dense Bi2Al4O9

Bi₂Al₄O₉ ceramics are difficult to sinter to greater than 80% theoretical density due to peritectic decomposition at 1,070 °C. A novel processing method is discussed where a high-bismuth oxide-based liquid is used as a sintering aid. After sintering, the high bismuth oxide phase is removed by leaching with 40% acetic acid. The resulting samples are phase pure and ∼91% dense. The grain size varies in a wide range with the average grain size of ∼1 μm. The electrical properties of these ceramics were measured as functions of temperature (550–850 °C) and oxygen partial pressure (6×10⁻⁶–1 atm). The total conductivity was separated into electronic and ionic contributions. The low ionic conductivity indicates that the material is not an ‘intrinsically defective fast ion conductor’. The ionic conductivity is due almost exclusively to compensating oxygen vacancies related to impurities. With increasing temperature and decreasing oxygen partial pressure, the electronic conduction dominates over the ionic conduction.