Improvement in intersubband optical absorption and the effects of device parameter variations in quantum wells with an applied electric field |
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| Authors: | E Kasapoglu H Sari Y Ergün I Sokmen |
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| Institution: | 1. Cumhuriyet University, Physics Department, 58140, Sivas, Turkey;2. Dokuz Eylül University, Physics Department, ?zmir, Turkey;1. College of Electrical Engineering & New Energy, Hubei Provincial Engineering Research Center of Intelligent Energy Technology, China Three Gorges University, Yichang, Hubei 443002, PR China;2. College of Materials and Chemical Engineering, Key Laboratory of Inorganic Nonmetallic Crystalline and Energy Conversion Materials, China Three Gorges University, Yichang, Hubei 443002, PR China;3. State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR China;4. School of Biological and Chemical Sciences, University of Missouri – Kansas City, Kansas City, MO 64110, USA;1. Tampere University of Technology, Department of Physics, P.O. Box 692, FI-33101 Tampere, Finland;2. STUK – Radiation and Nuclear Safety Authority, P.O. Box 14, FI-00881 Helsinki, Finland;3. European Commission, Joint Research Centre, Institute for Transuranium Elements, P.O. Box 2340, DE-76125 Karlsruhe, Germany;1. Institut für Mathematik, Technische Universität Berlin, Germany;2. Weierstraß–Institut für Angewandte Analysis und Stochastik, Berlin, Germany;1. Department of Physics, Western Michigan University, Kalamazoo, MI 49008, United States;2. Nuclear Engineering and Nonproliferation, Los Alamos National Laboratory, P.O. Box 1663, Los Alamos, NM 87545, United States;1. Basic and Applied Scientific Research Center (BASRC), Imam Abdulrahman Bin Faisal University, P. O. Box 1982, 31441, Dammam, Saudi Arabia;2. Department of Physics, College of Sciences for Girls, Imam Abdulrahman Bin Faisal University, P. O. Box 1982, 31441, Dammam, Saudi Arabia;3. Physics Department, Faculty of Applied Science, Umm AL-Qura University, P.O Box 715, Makkah, Saudi Arabia;4. Department of Naval Architecture and Marine Engineering, Faculty of Engineering, Piri Reis University, 34940, Istanbul, Turkey;5. Department of Physics, Faculty of Science, Sivas Cumhuriyet University, 58140, Sivas, Turkey;6. Department of Mathematics and Science, Ajman University, Ajman P.O. Box 346, United Arab Emirates;7. Nonlinear Dynamics Research Center (NDRC), Ajman University, Ajman P.O. Box 346, United Arab Emirates |
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| Abstract: | The intersubband optical absorption in symmetric and asymmetric, single and coupled, double GaAs/ Ga1 − xAlxAs quantum wells is calculated. The results have been obtained in the presence of a uniform electric field as a function of the potential symmetry, size of the quantum well, and coupling parameter of the wells. In coupled double quantum wells we obtain a large Stark effect that can be used to fabricate tuneable photodetectors. We show that the effect of an applied electric field on the intersubband optical absorption is similar to changes in the dimensions of the structure. This behaviour in the intersubband optical absorption for different wells and barrier geometries can be used to study these systems in regions of interest, without the need for the growth of many different samples. |
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