采用MOCVD方法在GaAs衬底上生长ZnO(002)和ZnO(100)薄膜

采用金属有机化学汽相沉积生长法（MOCVD），在不同的衬底表面处理条件和生长温度下，在GaAs衬底上生长出了ZnO薄膜。随着化学腐蚀条件的不同，可生长出优先定位不同的ZnO（100）和ZnO（002）薄膜。该薄膜的晶体结构特性是由X光衍射谱仪（XRD）所获得的，而其光学特性是由光荧光谱仪（PL）来测的。与ZnO（002）相比，ZnO（100）薄膜具有更优越的晶体结构特性，并且在同样的生长温度下都具有相似的光学特性。对于腐蚀条件不同的GaAs衬底所进行的XPS分析结果表明，ZnO薄膜优先定位变化的主要原因在于腐蚀过程中形成的富As层。

Growth of ZnO(002) and ZnO(100) Films on GaAs Substrates by MOCVD

ZnO films were grown on GaAs(001)substrates at different surface treatment conditions and growth temperatures by metal organic chemical vapor deposition(MOCVD).ZnO(100) and ZnO(002) films having different preferred orientations were grown according to the different chemical etch conditions.The crystallinity and optical properties of ZnO films were investigated with X-ray diffraction(XRD) and the room-temperature photoluminescence(PL) spectra.Compared with ZnO(002) films,ZnO(100) films undergoing a variation at the preferred orientations have better crystal structures.Moreover,all samples have similar optical characteristics at the same growth temperature.For GaAs substrates etched under the different conditions,the analysis results of X-ray photoelectroscopy(XPS) show that the preferred orientation variations of ZnO films take place because rich As layers are formed in the process of chemical etch.