| 快速退火后重掺硼的分子束外延层的电学特性 |
| |
| 引用本文： | 袁健,陆昉,孙恒慧,卫星,杨敏,黄大鸣,徐宏来,沈鸿烈,邹世昌.快速退火后重掺硼的分子束外延层的电学特性[J].物理学报,1994,43(7):1137-1143. |
| |
| 作者姓名： | 袁健 陆昉 孙恒慧 卫星 杨敏 黄大鸣 徐宏来 沈鸿烈 邹世昌 |
| |
| 作者单位： | (1)复旦大学李政道物理学综合实验室和物理系; (2)复旦大学应用表面物理国家重点实验室; (3)中国科学院上海冶金研究所信息功能材料国家重点实验室 |
| |
| 基金项目： | 国家自然科学基金和国家科学技术委员会基础研究及应用基础研究重大项目资助的课题. |
| |
| 摘 要： | 对快速退火后用共蒸发Ｂ２Ｏ3方法实现重掺杂硼的硅分子束外延层的电学特性进行了研究．１１００℃退火可以使得外延层中载流子浓度提高４倍，空穴的霍耳迁移率与相同浓度下硅体材料的水平相当；外延层与衬底之间载流子浓度转变陡峭，获得了晶体质量良好的外延层．
关键词：
|
| 关 键 词： | 分子束外延 快速退火 电学性质 |
| 收稿时间： | 1993-07-26 |
STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALING |
| |
| YUAN JIAN,LU FANG,SUN HENG-HUI,WEI XING,YANG MIN,HUANG DA-MING,XU HONG-LAI,SHEN HONG-LIE and ZOU SHI-CHANG.STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALING[J].Acta Physica Sinica,1994,43(7):1137-1143. |
| |
| Authors: | YUAN JIAN LU FANG SUN HENG-HUI WEI XING YANG MIN HUANG DA-MING XU HONG-LAI SHEN HONG-LIE and ZOU SHI-CHANG |
| |
| Abstract: | The effect of rapid thermal annealing on the electrical properties of heavily boron doped Si epilayer grown by molecular beam epitaxy and coevaporation of B２Ｏ3 is studied. It is found that an increment of carrier concentration by a factor of 4 and an improvement of the Hall mobility equivalent to that of bulk Si at the same doping concentration are achieved by annealing at 1100℃ for 10s. The rapid thermal annealing process does not affect the steep distribution of carrier concentration at the epilayer/substrate interface which differs about 6 order of magnitude across the interface with the leading edge slope of 25-30nm /decade. |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
