Electroluminescence parameters of thin-film ZnS: Mn electroluminescent devices

A new technique is suggested that makes it possible to determine the probability of radiative recombination of impact-excited Mn²⁺ luminescence centers, as well as to find the time dependences of the electron multiplication factor, impact ionization length, and impact ionization coefficient from the time dependences of the instantaneous internal quantum yield. These dependences follow from the time dependences of the luminance, as well as of the current and charge passing through the phosphor layer, when the devices are excited by a low-frequency ramp voltage.