Pressure sensitivity of the peak current of gallium arsenide tunnel diodes

The influence of hydrostatic pressure on the peak current of gallium arsenide tunnel diodes is studied in this paper. Analysis of the experimental pressure dependence of the peak current for diodes with different levels of doping in the n region and comparison with the theory served as the basis for finding the size of the energy gap between the absolute and secondary minima at the point X₁ and the velocity of travel of the energy gap with pressure: ⁰=(0.37±0.01) eV; d/dP = –(15±2)·10^–6 eV/bar.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 74–77, September, 1976.