| 薄栅氧化层中陷阱电荷密度的测量方法 |
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| 引用本文： | 刘红侠,郑雪峰,郝跃.薄栅氧化层中陷阱电荷密度的测量方法[J].物理学报,2002,51(1):163-166. |
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| 作者姓名： | 刘红侠 郑雪峰 郝跃 |
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| 作者单位： | 西安电子科技大学微电子研究所,西安710071 |
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| 基金项目： | 国家高技术研究发展计划 (批准号 :863 SOC Y 3 6 1)资助的课题 |
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| 摘 要： | 提出了一种测量陷阱电荷密度的实验方法,该方法根据电荷陷落的动态平衡方程,利用恒流应力前后MOS电容高频CV曲线结合恒流应力下栅电压的变化曲线求解陷阱电荷密度及位置等物理量.给出了陷阱电荷密度的解析表达式和相关参数的提取方法和结果.实验表明这种方法方便而且具有较高的精度
关键词：
薄栅氧化膜
经时击穿
恒流应力
陷阱电荷密度
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| 关 键 词： | 薄栅氧化膜 经时击穿 恒流应力 陷阱电荷密度 |
| 收稿时间： | 2001-06-19 |
| 修稿时间： | 2001年6月19日 |
A method for measuring the density of trapping charges in thin gate oxides |
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| Liu Hong-Xi,Zheng Xue-Feng and Hao Yao.A method for measuring the density of trapping charges in thin gate oxides[J].Acta Physica Sinica,2002,51(1):163-166. |
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| Authors: | Liu Hong-Xi Zheng Xue-Feng and Hao Yao |
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| Abstract: | This paper presents an experimental method for measuring the density of trapping charges. This method is based on the dynamic equilibrium equation for the process of trapped charges. We can obtain the density and the location of trapping charges by measuring the high frequency C\|V curve of MOS capacitance before and after stress,and the change of gate voltage under constant current stress. The analytical expression of the density of trapping charges is proposed. The method and the results of parameters extraction are also presented. Experimental results show that this method is convenient and precise. |
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| Keywords: | thin gate oxides time dependent dielectric breakdown(TDDB) constant current stress density of trapping charges |
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