| 陶瓷单晶(100)基底上外延生长Pt薄膜 |
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| 引用本文： | 赵昆,黄康权,张丽.陶瓷单晶(100)基底上外延生长Pt薄膜[J].人工晶体学报,2004,33(4):690-693. |
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| 作者姓名： | 赵昆 黄康权 张丽 |
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| 作者单位： | 聊城大学物理科学与信息工程学院磁电子学实验室,聊城,252059;香港中文大学物理系,香港,新界;香港中文大学物理系,香港,新界;聊城大学物理科学与信息工程学院磁电子学实验室,聊城,252059 |
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| 基金项目： | theResearchFoundationofShandongProvincialEducationDepartmentofChina (No .0 3A0 5) ,ShandongScienceFundforDistinguishedYoungScientist (No .0 2BS0 50 ) ,andtheHongKongResearchGrantCouncil |
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| 摘 要： | 用对靶溅射技术在MgAl2O4 (100) (MAO) 和SrTiO3 (100) (STO)单晶基底上制备Pt薄膜.基底温度为700℃时,Pt薄膜外延生长为(200)取向,Pt/STO 薄膜的电阻率很低,而Pt/MAO 薄膜表现出高电阻特征.此外,Pt (50nm)/La0.67Ca0.33MnO3 (50nm)/STO的制备和研究表明,在包括庞磁电阻材料的器件设计中,Pt是一种较好的电极材料.
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| 关 键 词： | Pt薄膜 溅射 X射线衍射 原子力显微镜 庞磁电阻 |
Formation of Epitaxial Platinum Films on Ceramics-(100) Single Crystal Substrates |
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| Abstract.Formation of Epitaxial Platinum Films on Ceramics-(100) Single Crystal Substrates[J].Journal of Synthetic Crystals,2004,33(4):690-693. |
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| Authors: | Abstract |
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| Abstract: | Thin platinum (Pt) films were prepared on single-crystal substrates MgAl2O4 (100) (MAO) and SrTiO3 (100) (STO) by a facing-target sputtering technique. The films prepared at higher substrate temperature (Ts= 700℃) were grown epitaxially with (200) orientation on SrTiO3 (100) and MgAl2O4 (100). Different from the lower resistivity of Pt/STO film, Pt/MAO film shows a very higher resistivity and the temperature dependence of the resistance exhibits insulator behavior because of the pinhole formation. We also grew epitaxial Pt (50 nm)/La0.67Ca0.33MnO3 (50nm)/STO structure, indicating that Pt is a good electrode for devices involving colossal magnetoresistance materials. |
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| Keywords: | Pt film sputtering X-ray diffraction atomic force microscopy colossal magnetoresistance |
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