Synthesis of GaN nanowires on gold-coated SiC substrates by novel pulsed electron deposition technique |
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Authors: | M Lei H Yang WH Tang |
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Institution: | a Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou 310018, China b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 10080, China |
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Abstract: | A two-step approach for macro-synthesis of GaN nanowires was developed in this study. GaN nanoparticles were firstly synthesized through a facile solid-state reaction using an organic reagent dicyandiamide (C2N4H4) and Ga2O3 as precursors. Subsequently, single-crystalline wurtzite GaN nanowires were grown on gold-coated 6H-SiC substrates via novel pulsed electron deposition (PED) technique using the as-prepared GaN nanoparticles as target, which provides a new route employing nanoparticles as precursors to fabricate GaN nanowires. It is found that pulsed electron ablation induced Ga and N plasma directly towards the gold-coated substrate to initialize the vapor-liquid-solid (VLS) growth processes. The morphological and structural properties were investigated in detail and Raman scattering spectrum of these nanowires presented some new features. |
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Keywords: | GaN Nanowire Pulsed electron deposition technique Raman scattering spectroscopy |
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