On the use of response surface methodology to predict and interpret the preferred c-axis orientation of sputtered AlN thin films |
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Authors: | J Adamczyk A Tricoteaux M Zadam |
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Institution: | a IUT de Valenciennes, Département Mesures Physiques, UVHC, Z.I. du Champ de l’Abbesse, 59600 Maubeuge, France b Electronic Department, Badji Mokhtar University, BP12 Annaba, Algeria |
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Abstract: | This paper deals with experimental design applied to response surface methodology (RSM) in order to determine the influence of the discharge conditions on preferred c-axis orientation of sputtered AlN thin films. The thin films have been deposited by DC reactive magnetron sputtering on Si (1 0 0) substrates. The preferred orientation was evaluated using a conventional Bragg-Brentano X-ray diffractometer (θ-2θ) with the CuKα radiation. We have first determined the experimental domain for 3 parameters: sputtering pressure (2-6 mTorr), discharge current (312-438 mA) and nitrogen percentage (17-33%). For the setup of the experimental design we have used a three factors Doehlert matrix which allows the use of the statistical response surface methodology (RSM) in a spherical domain. A four dimensional surface response, which represents the (0 0 0 2) peak height as a function of sputtering pressure, discharge current and nitrogen percentage, was obtained. It has been found that the main interaction affecting the preferential c-axis orientation was the pressure-nitrogen percentage interaction. It has been proved that a Box-Cox transformation is a very useful method to interpret and discuss the experimental results and leads to predictions in good agreement with experiments. |
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Keywords: | Aluminium nitride Reactive DC sputtering Response surface methodology X-ray diffraction |
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