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The structural and optical properties of ZnO/Si thin films by RTA treatments |
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| Authors: | SY Hu YC Lee JC Huang W Water |
| Institution: | a Department of Electrical Engineering and VLSI/CAD Center, Tung Fang Institute of Technology, Hunei Township, Kaohsiung County 82941, Taiwan b Department of Electronic Engineering and Research Center for Micro/Nano Technology, Tungnan University, Shen-Keng, Taipei 22202, Taiwan c Department of Mechanical Engineering and Research Center for Micro/Nano Technology, Tungnan University, Shen-Keng, Taipei 22202, Taiwan d Department of Physics, Chung Yuan Christian University, Chung-Li, Tao-Yuan 32023, Taiwan e Department of Electronic Engineering, National Formosa University, Hu-Wei, Yun-Lin 63201, Taiwan |
| Abstract: | ZnO/Si thin films were prepared by rf magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process at different temperatures ranging from 400 to 800 °C. The effects of RTA treatment on the structural properties were studied by using X-ray diffraction and atomic force microscopy while optical properties were studied by the photoluminescence measurements. It is observed that the ZnO film annealed at 600 °C reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at 600 °C is attributed to the improved crystalline quality of ZnO film due to the effective relaxation of residual compressive stress and achieving maximum grain size. |
| Keywords: | 61 72 Cc 68 55 Jk 78 55 &minus m 81 40 Ef |
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