The effect of controlled ion bombardment on the electronic structure of the Si(0 0 1) surface |
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Authors: | KR Roos J Lozano JH Craig Jr |
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Institution: | Department of Physics, Bradley University, Peoria, IL 61625, United States |
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Abstract: | We have studied the effects of controlled ion bombardment on the electronic structure of the Si(0 0 1) surface. The surface was exposed to various doses of Ar+ ions accelerated towards the surface at 500 eV. X-ray photoelectron spectroscopy (XPS) spectra of the irradiated H-terminated Si(0 0 1) surface reveal the appearance of peaks that are associated with the presence of cleaved Si bonds. Ultraviolet photoelectron spectroscopy (UPS) spectra of the irradiated Si(0 0 1)2 × 1 surface show that the dimer dangling-bond surface state decays monotonically with increasing dose. These results, coupled with previous scanning tunneling microscopy (STM) studies, indicate that the breaking of dimers, and possibly the creation of adatom-like defects, during ion irradiation are responsible for the changes in the electronic structure of the valence band for this surface. |
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Keywords: | Silicon Ion bombardment X-ray photoelectron spectroscopy Ultraviolet photoelectron spectroscopy Surface defects Surface electronic phenomena |
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