Non-linear dissolution of amorphous arsenic sulfide-selenide photoresist films |
| |
| Authors: | V. Lyubin A. Arsh M. Klebanov M. Manevich J. Varshal R. Dror B. Sfez A. V. Latyshev D. A. Nasimov N. P. Eisenberg |
| |
| Affiliation: | (1) Department of Physics, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel;(2) Department of Electro-Optics, Lev Institute-JCT, Jerusalem, 91160, Israel;(3) Electro-Optics Division, NRC Soreq, 81800 Yavne, Israel;(4) Nanolithography Lab, Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia |
| |
| Abstract: | The properties of non-linear inorganic chalcogenide photoresists fabricated by co-evaporation of Ag with amorphous arsenic sulfide-selenide materials are considered in detail. The influence of several factors, including Ag concentration, irradiation wavelength and composition of the developer on the photoresists characteristics was studied. Superlinear dissolution characteristics of the photoresists are explained in the frame of the so-called “percolation approach”. The advantages of superlinear photoresists, especially for the case of maskless photolithography, are briefly discussed. |
| |
| Keywords: | KeywordHeading" >PACS 42.70.Gi 77.84.Bw 78.66.Jg 85.40.Hp 42.79.Bh |
| 本文献已被 SpringerLink 等数据库收录！ |
|
