| 电化学电容-电压法表征等离子体掺杂超浅结 |
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| 引用本文： | 武慧珍,茹国平,张永刚,金成国,水野文二,蒋玉龙,屈新萍,李炳宗. 电化学电容-电压法表征等离子体掺杂超浅结[J]. 半导体学报, 2006, 27(11): 1966-1969 |
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| 作者姓名： | 武慧珍 茹国平 张永刚 金成国 水野文二 蒋玉龙 屈新萍 李炳宗 |
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| 作者单位： | 复旦大学微电子学系，上海 200433;复旦大学微电子学系，上海 200433;中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室，上海 200050;Ultimate Junction Technologies Inc,3-1-1,Yagumonakamachi,Moriguchi,Osaka,570-8501,Japan;Ultimate Junction Technologies Inc,3-1-1,Yagumonakamachi,Moriguchi,Osaka,570-8501,Japan;复旦大学微电子学系，上海 200433;复旦大学微电子学系，上海 200433;复旦大学微电子学系，上海 200433 |
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| 摘 要： | 采用电化学电容-电压(ECV)法对等离子体掺杂制备的Si超浅p n结进行了电学表征.通过对超浅p n结样品ECV测试和二次离子质谱(SIMS)测试及比较,发现用ECV测试获得的p 层杂质浓度分布及结深与SIMS测试结果具有良好的一致性,但ECV测试下层轻掺杂n型衬底杂质浓度受上层高浓度掺杂影响很大.ECV测试具有良好的可控性与重复性.对不同退火方法等离子体掺杂形成的超浅结样品的ECV系列测试结果表明,ECV能可靠地表征结深达10nm,杂质浓度达1021cm-3量级的Si超浅结样品,其深度分辨率可达纳米量级,它有望在亚65nm节点CMOS器件的超浅结表征中获得应用.
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| 关 键 词： | 电化学电容-电压 超浅结 杂质浓度 电化学 电容 电压法 表征 等离子体 掺杂影响 超浅结 Characterization 应用 器件 CMOS 节点 纳米量级 分辨率 深度 衬底杂质浓度 退火方法 可控性 高浓度 一致性 |
| 文章编号： | 0253-4177(2006)11-1966-04 |
| 收稿时间： | 2006-03-06 |
| 修稿时间： | 2006-07-09 |
Electrochemical Capacitance-Voltage Characterizationof Plasma-Doped Ultra-Shallow Junctions |
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| Wu Huizhen,Ru Guoping,Zhang Yonggang,Jin C G,Mizuno B,Jiang Yulong,Qu Xinping and Li Bingzong. Electrochemical Capacitance-Voltage Characterizationof Plasma-Doped Ultra-Shallow Junctions[J]. Chinese Journal of Semiconductors, 2006, 27(11): 1966-1969 |
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| Authors: | Wu Huizhen Ru Guoping Zhang Yonggang Jin C G Mizuno B Jiang Yulong Qu Xinping Li Bingzong |
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| Affiliation: | Department of Microelectronics,Fudan University,Shanghai 200433,China;Department of Microelectronics,Fudan University,Shanghai 200433,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystemand Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Ultimate Junction Technologies Inc.,3-1-1,Yagumonakamachi,Moriguchi,Osaka 570-8501,Japan;Ultimate Junction Technologies Inc.,3-1-1,Yagumonakamachi,Moriguchi,Osaka 570-8501,Japan;Department of Microelectronics,Fudan University,Shanghai 200433,China;Department of Microelectronics,Fudan University,Shanghai 200433,China;Department of Microelectronics,Fudan University,Shanghai 200433,China |
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| Abstract: | Ultra-shallow Si p+n junctions formed by plasma doping are characterized by electrochemical capacitance-voltage(ECV).By comparing ECV results with secondary ion mass spectroscopy(SIMS) results,it is found that the dopant concentration profiles in the heavily-doped p+ layer as well as junction depths measured by ECV are in good agreement with those measured by SIMS.But the ECV measurement of the dopant concentration in the lightly doped n-type substrate underneath is significantly influenced by the upper heavily-doped layer.The ECV technique is also easy to control and reproduce.The ECV results of ultra-shallow junctions (USJ) formed by plasma doping followed by different annealing processes show that ECV is capable of reliably characterizing a Si USJ with a junction depth as low as 10nm,and dopant concentration up to 1E21cm-3.Its depth resolution can reach as low as 1nm.Therefore it shows great potential in applications for characterizing USJ in sub-65nm technology node CMOS devices. |
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| Keywords: | electrochemical capacitance-voltage ultra-shallow junction dopant concentration |
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