Bright electrophosphorescent devices based on sterically hindered spacer-containing Cu(I) complex |
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| Authors: | Zhenjun Si Bin Li Shiyong Liu Wenlian Li |
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| Institution: | a Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, and Graduate School of the Chinese Academy of Sciences, Chinese Academy of Sciences, Changchun 130033, PR China
b State Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023, PR China |
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| Abstract: | A Cu(I) complex, Cu(Dppp)(DPEphos)]BF4 (Dppp=2,3-diphenyl-pyrazino2,3-f]1,10]phenanthroline, DPEphos=Bis2-(diphenylphosphino)phenyl]ether), is synthesized and used as the dopant in bright electrophosphorescent devices with the general structure ITO/m-MTDATA (30 nm)/NPB (20 nm)/CBP: ×wt% Cu(Dppp)(DPEphos)]BF4 (30 nm)/Bphen (20 nm)/Alq3 (20 nm)/LiF (0.8 nm)/ Al (200 nm). These devices exhibit a maximum brightness of 4483 cd/m2 and a peak efficiency of 3.4 cd/A. Compared with previously reported similar devices based on Cu(I) complexes, the brightness of the devices presented in this article is the best. Meanwhile, 2% Cu(Dppp)(DPEphos)]BF4-based devices exhibit white light-emitting properties with CIE coordinates of (0.32. 0.35) at 10 V. |
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| Keywords: | 78 55 85 60 P 79 60 B |
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