Concept of epitaxial silicon structures for edge illuminated solar cells |
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Authors: | J. Sarnecki G. Gawlik M. Teodorczyk O. Jeremiasz R. Kozłowski D. Lipiński K. Krzyżak A. Brzozowski |
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Affiliation: | (1) Department of Chemistry, University of Wales, Bangor, LL57 2UW Gwynedd, UK |
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Abstract: | A new concept of edge illuminated solar cells (EISC) based on silicon epitaxial technique has been proposed. In this kind of photovoltaic (PV) devices, sun-light illuminates directly a p-n junction through the edge of the structure which is perpendicular to junction surface. The main motivation of the presented work is preparation of a working model of an edge-illuminated silicon epitaxial solar cell sufficient to cooperation with a luminescent solar concentrator (LSC) consisted of a polymer foil doped with a luminescent material. The technological processes affecting the cell I–V characteristic and PV parameters are considered. |
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