Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias |
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作者姓名: | 陈赛艳 卢卯旺 曹雪丽 |
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作者单位: | College of Science, Guilin University of Technology, Guilin 541004, China |
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基金项目: | the National Natural Science Foundation of China(Grant No.11864009). |
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摘 要: | The dwell time and spin polarization(SP)of electrons tunneling through a parallel doubleδ-magnetic-barrier nanostructure in the presence of a bias voltage is studied theoretically in this work.This nanostructure can be constructed by patterning two asymmetric ferromagnetic stripes on the top and bottom of InAs/AlxIn1-xAs heterostructure,respectively.An evident SP effect remains after a bias voltage is applied to the nanostructure.Moreover,both magnitude and sign of spin-polarized dwell time can be manipulated by properly changing the bias voltage,which may result in an electrically-tunable temporal spin splitter for spintronics device applications.
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关 键 词: | parallel doubleδ-magnetic-barrier nanostructure BIAS dwell time spin polarization temporal spin splitter |
收稿时间: | 2021-01-17 |
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