Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers |
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Authors: | Xiao-Bo He Hua-Tian Hu Ji-Bo Tang Guo-Zhen Zhang Xue Chen Jun-Jun Shi Zhen-Wei Ou Zhi-Feng Shi Shun-Ping Zhang Chang Liu Hong-Xing Xu |
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Affiliation: | (School of Physics and Technology,Center for Nanoscience and Nanotechnology,and Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education,Wuhan University,Wuhan 430072,China;Shandong Provincial Engineering and Technical Center of Light Manipulation and Shandong Provincial Key Laboratory of Optics and Photonic Devices,School of Physics and Electronics,Shandong Normal University,Jinan 250014,China;The Institute for Advanced Studies,Wuhan University,Wuhan 430072,China;Key Laboratory of Materials Physics of Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450052,China) |
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Abstract: | Light emission by inelastic tunneling (LEIT) from a metal-insulator-metal tunnel junction is an ultrafast emission process. It is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated circuits. However, existing procedures of fabricating LEIT devices usually involve both top-down and bottom-up techniques, which reduces its compatibility with the modern microfabrication streamline and limits its potential applications in industrial scale-up. Here in this work, we lift these restrictions by using a multilayer insulator grown by atomic layer deposition as the tunnel barrier. For the first time, we fabricate an LEIT device fully by microfabrication techniques and show a stable performance under ambient conditions. Uniform electroluminescence is observed over the entire active region, with the emission spectrum shaped by metallic grating plasmons. The introduction of a multilayer insulator into the LEIT can provide an additional degree of freedom for engineering the energy band landscape of the tunnel barrier. The presented scheme of preparing a stable ultrathin tunnel barrier may also find some applications in a wide range of integrated optoelectronic devices. |
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Keywords: | electroluminescence plasmonics inelastic electron tunneling multilayer insulator atomic layer deposition |
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