| 反射式高能电子衍射实时监控的分子束外延生长GaAs晶体衬底温度校准及表面相变的研究 |
| |
| 引用本文： | 周勋,杨再荣,罗子江,贺业全,何浩,韦俊,邓朝勇,丁召.反射式高能电子衍射实时监控的分子束外延生长GaAs晶体衬底温度校准及表面相变的研究[J].物理学报,2011,60(1):16109-016109. |
| |
| 作者姓名： | 周勋 杨再荣 罗子江 贺业全 何浩 韦俊 邓朝勇 丁召 |
| |
| 作者单位： | (1)贵州大学理学院,贵州省微纳电子与软件技术重点实验室,贵阳 550025; (2)贵州大学理学院,贵州省微纳电子与软件技术重点实验室,贵阳 550025;贵州师范大学物理与电子科学学院,贵阳 550001; (3)贵州师范大学物理与电子科学学院,贵阳 550001 |
| |
| 基金项目： | 国家自然科学基金(批准号: 60866001),贵州省委组织部高层人才科研特助项目(批准号: Z073011,TZJF-2008-31),贵州省科技厅基金(批准号: Z073085),贵州大学博士基金(批准号: X060031),贵州省优秀科技教育人才省长专项基金(批准号: 黔省专合字(2009)114号),教育部新世纪优秀人才支持计划 (批准号: NCET-08-0651),贵州省优秀青年科技人才培养计划(批准号:[2009]-15)资助的课题. |
| |
| 摘 要： | 以反射式高能电子衍射(RHEED)作为实时监测工具,根据GaAs(100)表面重构相与衬底温度、As4等效束流压强之间的关系,对分子束外延(MBE)系统中衬底测温系统进行了校准,这种方法也适用于其他的MBE系统.为生长高质量的外延薄膜材料、研究InGaAs表面粗糙化及相变等过程提供了实验依据.
关键词：
分子束外延
反射式高能电子衍射
表面重构
温度校准
|
| 关 键 词： | 分子束外延 反射式高能电子衍射 表面重构 温度校准 |
| 收稿时间： | 4/8/2010 12:00:00 AM |
Study on temperature calibration and surface phase transition of GaAs crystal substrate in MBE growth by RHEED real-time monitoring |
| |
| Zhou Xun,Yang Zai-Rong,Luo Zi-Jiang,He Ye-Quan,He Hao,Wei Jun,Deng Chao-Yong,Ding Zhao.Study on temperature calibration and surface phase transition of GaAs crystal substrate in MBE growth by RHEED real-time monitoring[J].Acta Physica Sinica,2011,60(1):16109-016109. |
| |
| Authors: | Zhou Xun Yang Zai-Rong Luo Zi-Jiang He Ye-Quan He Hao Wei Jun Deng Chao-Yong Ding Zhao |
| |
| Institution: | Science college, Guizhou University, Key laboratory of MicroNano Electronies of Guizhou Province, Guiyang 550025, China;School of Physics and Electronics Science, Guizhou Normal University, Guiyang 550001, China;Science college, Guizhou University, Key laboratory of MicroNano Electronies of Guizhou Province, Guiyang 550025, China;Science college, Guizhou University, Key laboratory of MicroNano Electronies of Guizhou Province, Guiyang 550025, China;Science college, Guizhou University, Key laboratory of MicroNano Electronies of Guizhou Province, Guiyang 550025, China;Science college, Guizhou University, Key laboratory of MicroNano Electronies of Guizhou Province, Guiyang 550025, China;School of Physics and Electronics Science, Guizhou Normal University, Guiyang 550001, China;Science college, Guizhou University, Key laboratory of MicroNano Electronies of Guizhou Province, Guiyang 550025, China;Science college, Guizhou University, Key laboratory of MicroNano Electronies of Guizhou Province, Guiyang 550025, China |
| |
| Abstract: | Using RHEED as a real-time monitoring tool, the MBE temperature measurement system was calibrated according to the relationship between GaAs (100) surface reconstruction phase and the substrate temperature, As4 beam equivalent pressure of the substrate. This approach can also be applied to other MBE systems. It provides an experimental basis of the growth of high-quality epitaxial thin films for studying of the surface roughness of InGaAs, the phase transformation process and the surface morphology. |
| |
| Keywords: | MBE RHEED surface reconstruction temperature calibration |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
