Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells |
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| Authors: | Jun Chen Guanghan Fan Wei Pang Shuwen Zheng Yunyan Zhang |
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| Institution: | 1Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China 2Experimental Teaching Center, Guangdong University of Technology, Guangzhou 510006, China 3Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China |
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| Abstract: | Designs of p-doped in quantum well (QW) barriers and specific number of vertically stacked QWs are proposed to improve the optical performance of GaN-based dual-wavelength light-emitting diodes (LEDs). Emission spectra, carrier concentration, electron current density, and internal quantum efficiency (IQE) are studied numerically. Simulation results show that the efficiency droop and the spectrum intensity at the large current injection are improved markedly by using the proposed design. Compared with the conventional LEDs, the uniform spectrum intensity of dual-wavelength luminescence is realized when a specific number of vertically stacked QWs is adopted. Suppression of electron leakage current and the promotion of hole injection efficiency could be one of the main reasons for these improvements. |
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