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Erratum to: 2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties
Authors:Fatahi  Negin  Hoat  D. M.  Laref  Amel  Amirian  Shirin  Reshak  A. H.  Naseri  Mosayeb
Affiliation:1.Department of Electrical and Electronic Engineering, Ibaraki University 4-12-1 Nakanarusawa, Hitachi, Ibarak, 316-8511, Japan
;2.Department of Electrical and Information Systems, Osaka Prefecture University 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan
;
Abstract:The European Physical Journal B - The present study investigates amplitude death in an oscillator network with asymmetric connection delays and a tree graph topology. A frequency domain analysis...
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