Formation of functional phosphosilicate gels from phytic acid and tetraethyl orthosilicate

Phosphosilicate gels with high phosphorus content (P mol% > Si mol%) have been prepared using phytic acid as the phosphorus precursor, with tetraethyl orthosilicate (TEOS). It is shown that the structure of phytic acid is maintained in both the sols and those gels dried at a low temperature (i.e. ≤120 °C). Solid state ²⁹Si and ³¹P NMR suggest that the gel network is primarily based on tetrahedral silicon and that phosphorus is not chemically incorporated into the silicate network at this point. X-ray diffraction shows the gel to be amorphous at low temperatures. After heat treatment at higher temperatures (i.e. up to 450 °C), P–O–Si linkages are formed and the silicon coordination changes from tetrahedral to octahedral. At the same time, the gel crystallizes. Even after this partial calcination, ³¹P NMR shows that a large fraction of phytic acid remains in the network. The function of phytic acid as chelating agent is also maintained in the gels dried at 120 °C such that its ability to absorb Ca²⁺ from aqueous solution is preserved.